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    • 专利摘要:
    RF switch having a first region (15) based on phase change material (20) disposed between a first conductive element (11) and a second conductive element (12) and state control means of said first region (15), the switch being further provided with at least one first decoupling switch (INT1) provided with a second region (17) of phase change material.
    公开号:FR3071364A1
    申请号:FR1758680
    申请日:2017-09-19
    公开日:2019-03-22
    发明作者:Bruno Reig；Alexandre LEON；Damien Saint-Patrice
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    RF / DC DECOUPLING SYSTEM FOR RF SWITCHES BASED ON PHASE CHANGE MATERIAL
    DESCRIPTION
    TECHNICAL AREA AND PRIOR ART
    The present application relates to the field of RF switches incorporating a phase change material and relates in particular to those produced in thin layers and which can be part of an integrated circuit or of an electronic device.
    An RF switch is a structure intended to reversibly modify the electrical connections between elements of an RF circuit.
    RF switches are usually made from electronic components such as field effect transistors or PIN diodes (for “Positive Intrinsic Negative”) or using electro-mechanical MEMS relays.
    RF switches incorporating a phase change material (PCM) have also appeared.
    The operation of an RF switch based on PCM material is typically based on two states that this material is likely to adopt:
    - an amorphous state with high resistivity, which corresponds to a blocked state of the switch during which the transmission of an RF signal between at least two terminals is prevented,
    - a crystalline state with low resistivity, which corresponds to a passing state of the switch during which the transmission of the RF signal between the two terminals is permitted.
    Both states are stable, it is not necessary to maintain a current / voltage to maintain a state which allows a power saving compared to other technologies such as switches based on FET or diode
    PINE.
    In addition, a switch provided with PCM material makes it possible to route signals of greater power than that of the signals usually conveyed by MEMS switches.
    Document US 2014/0266517 A1 provides an example of a switch provided with a PCM material inserted between an input conductive line and an output conductive line through which an RF signal is intended to pass.
    The phase change of the PCM material is obtained by passing a current pulse through dedicated control electrodes.
    A particular example of a PCM switch structure is illustrated in Figure 1.
    The RF switch has a region 5 based on PCM which can alternately adopt an amorphous state of high resistivity, which is assimilated to a blocked state (OFF) in which transmission of the RF signal is prevented and a crystalline state. which is assimilated to a passing state (ON) in which an RF signal is capable of being transmitted between two conductive elements 1, 2 arranged on either side of the region 5 of PCM material.
    The switching between blocked and on state is here ensured by so-called "direct" heating using a DC control circuit provided with control electrodes 3, 4 arranged on either side and in contact with the region of PCM material 5 to which current pulses are applied.
    When the region 5 is in a weakly resistive state the RF signal is transmitted from one conductive element 1 to the other conductive element 2, but a part of the RF signal is liable to leak towards the control circuit DC.
    In the field of MEMS or transistor switches, it is known to perform RF / DC decoupling by adding a fixed resistor in series on a control line of the switch. However, such a solution applied to PCM switches would require significantly increasing the control voltage required to switch the region of PCM material.
    Document US 2014/0191181 ° A1 provides an RF switch with PCM material in which RF / DC decoupling is implemented using inductors and capacitors. Such a type of decoupling circuit has the disadvantage of being bulky.
    The problem arises of finding a new RF switch structure with improved PCM material with respect to the drawbacks mentioned above.
    STATEMENT OF THE INVENTION
    An object of the present invention is to provide an RF switch based on PCM material provided with an RF / DC decoupling means of reduced bulk.
    The aim stated above is achieved by an RF switch capable of modifying a connection between a first conductive element and a second conductive element, this switch element being adapted for alternately routing an RF signal and for interrupting the routing of an RF signal between the first conductive element and the second conductive element, the RF switch being provided with:
    a first region based on phase change material placed between the first conductive element and the second conductive element,
    - state control means of said first region of phase change material configured to modify by heating the crystalline or amorphous state of said phase change material of said first region, the control means being provided with electrodes control arranged on either side of the first region and designed to apply an electrical signal for controlling the state of the first region of phase change material, the switch being further provided with a first decoupling switch configured to alternately connect a first control electrode and the first region of phase change material when said first decoupling switch is on and to disconnect the first control electrode and the first region of phase change material when the first decoupling switch is blocked, the decoupling switch comprising a second region d e phase change material disposed between said first control electrode and a second control electrode disposed against the first region of phase change material.
    The RF switch may be provided with heating means configured to place the first decoupling switch alternately in a conducting state and in a blocked state, the heating means being provided with electrodes arranged on either side of said second region of phase change material and provided for applying an electrical activation signal capable of modifying the crystalline or amorphous state of said phase change material of said second region of phase change material.
    According to a first possibility of implementing the RF switch, the electrodes intended to apply the electrical activation signal are heating electrodes distinct from said control electrodes.
    According to a second possibility of implementation, the electrical activation signal is conveyed through the first control electrode. The first control electrode then fulfills the function of heating electrode of the second PCM region and of control electrode of the first PCM region. According to a particular embodiment, the first conductive element is a conductive line capable of conveying the RF signal from a first point to a second point of an RF circuit, the first region of phase change material forming a shunt or shunt controlled (e). The second conductive element then serves as a ground to which the RF signal can be derived.
    According to a third possibility of implementation, the electrical activation signal is conveyed by the first control electrode and a heating electrode distinct from said first and second control electrodes.
    According to a fourth implementation possibility, the electrodes capable of applying the electrical activation signal are heating electrodes distinct from said first and second control electrodes, the second region of PCM material being disposed between the first control electrode and a second control electrode in contact with the first conductive element.
    The RF switch may be provided with a second decoupling switch capable of alternately connecting and disconnecting another control electrode and the first region of phase change material, said second decoupling switch comprising another region of phase change material disposed between said other control electrode and said first region of phase change material.
    In this case, the RF switch can be configured to alternately pass from a first state to a second state and vice versa and to pass from the first state of the switch to a third state and vice versa, and to pass from the third state to a fourth state and conversely, the first state of the switch being such that the first decoupling switch, the second decoupling switch are conducting while the first conductive element and the second conductive element are connected to each other, the second state of the switch being such that the first decoupling switch, the second decoupling switch are blocked while the first conductive element and the second conductive element are connected to each other, the third state of the switch being such that the first decoupling switch, the second decoupling switch are conducting while the first conductive element and the second conductive element are disconnected from each other, the fourth state of the switch being such as the first decoupling switch, the second decoupling switch are blocked while the first conductive element and the second conductive element are disconnected one the other.
    Alternatively, the RF switch can be configured to alternately go from a first state to a second state and vice versa and to go from the first state of the switch to a third state and vice versa, the first state of the switch being such that the first switch decoupling, the second decoupling switch are conducting while the first conductive element and the second conductive element are connected to each other, the second state of the switch being such that the first decoupling switch, the second decoupling switch are blocked while the first conductive element and the second conductive element are connected to each other, the third state of the switch being such as the first decoupling switch, the second decoupling switch are blocked while the first conductive element and the second conductive element are disconnected from each other.
    It is also possible to provide at least a third decoupling switch in series with the first decoupling switch, the third decoupling switch comprising a region of phase change material.
    According to an advantageous arrangement of the RF switch, the first control electrode has separate connections at several points of the first region of PCM material, the first conductive element or the first electrode being provided with a first conductive portion arranged in a first plane parallel to a main plane of the substrate, a second conductive portion disposed in a second plane parallel to the main substrate plane and distinct from the first plane, and a via conductor connecting the first conductive portion of the second conductive portion, the first control electrode extending between the first conductive element and the second conductive element without being in contact with the first conductive element or the second conductive element.
    According to a possible implementation of the RF switch, the first region of phase change material can be based on a first phase change material while the second region of phase change material can be based on a second phase change material different from the first phase change material.
    This can participate in the realization of an independent control between the RF switch and the first decoupling switch.
    To allow such independent control, provision may also be made to control the changes of state of the first region of material to be changed by direct heating with electrodes directly in contact with this first region, while the changes of state of the second region of material to change are controlled by indirect heating, heating electrodes making it possible to control this change of state of the second region being located at a distance and isolated from the material
    PCM of the second region.
    To allow independent control of the PCM material regions, the respective geometries of these regions can also be adapted.
    Thus, according to one possible implementation, the heating means are provided with heating electrodes arranged on either side of said second region of phase change material, the second region of phase change material having between its heating electrodes a dimension X2 different from another dimension Y3 corresponding to the width of the heating electrodes in contact with the second region of phase change material
    According to one embodiment, the second region of phase change material has between its heating electrodes a dimension X2 different from a dimension X3 corresponding to the width of the first control electrode and of another control electrode in contact of the first phase change material region.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of examples of embodiments given, purely by way of indication and in no way limiting, with reference to the appended drawings in which:
    FIG. 1 is used to illustrate an example of an RF switch implemented according to the prior art,
    FIG. 2 is used to illustrate an example of an RF switch according to an embodiment of the present invention and provided with DC / RF decoupling switches made of PCM material,
    FIGS. 3A-3D are used to illustrate different operating states of an RF switch,
    FIGS. 4A-4C serve to illustrate an exemplary embodiment of the RF switch on a substrate,
    FIGS. 5A-5H serve to illustrate an example of a method of manufacturing an RF switch with a DC / RF decoupling switch,
    FIG. 6 is used to illustrate an alternative embodiment of an RF switch produced on a substrate and provided with regions of phase change material arranged under the associated control and / or heating electrodes,
    FIGS. 7A-7C serve to illustrate alternative embodiments for which RF switch control and / or decoupling heater heating electrodes are arranged so as to provide indirect heating of the regions of phase change material with which they are associated,
    - Figure 8 is used to illustrate an example of an RF switch formed by an RF switch associated with a DC / RF decoupling switch with PCM material, the state of which is controlled using electrodes also used to control the state PCM material of the RF switch,
    - Figure 9 is used to illustrate an RF switch formed of a line carrying an RF signal alternately connected to, and disconnected from a branch depending on the state of a region of PCM material itself associated with a switch decoupling
    - Figure 10 is used to illustrate an RF switch with a decoupling switch whose state is controlled via a heating electrode and a control electrode also used to control the state of a RF switch,
    FIG. 11 is used to illustrate an RF switch provided with an RF switch and with a DC / RF decoupling switch, these switches comprising regions based on different PCM materials,
    FIG. 12 is used to illustrate an RF switch with several decoupling switches in series,
    FIG. 13 is used to illustrate an RF switch with a decoupling switch in series with an RF switch,
    - Figure 14 is used to illustrate a variant of RF switch with decoupling switches without additional heating electrode.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    First of all, reference is made to the device of FIG. 2 schematically illustrating an embodiment of a switch with phase change material.
    This switch makes it possible to modify a connection between at least a first conductive element 11 and at least a second conductive element 12. In this example, the conductive elements 11, 12 are elements of a circuit intended to convey radio frequency signals ( RF).
    The switch is thus an RF switch able to establish or interrupt a connection between a first circuit portion and a second circuit portion depending on the state of at least one phase change material (PCM) arranged between these two. portions. The switch makes it possible, alternatively, to route an RF signal and to prevent the routing of an RF signal between the conducting elements 11, 12.
    The first conductive element 11 and the second conductive element 12 form in this embodiment two terminations of an RF electrical signal transmission line, these two terminations being separated from each other by a first region 15 based on a phase change material 20 and being electrically connected to, and advantageously in contact with, this phase change material 20.
    The switch is capable of adopting at least one so-called “on” state in which the first conductive element 11 and the second conductive element 12 are connected to each other so that at least one RF signal can pass from the first conductive element 11 to the second conductive element 12. The switch is also capable of adopting at least one so-called “blocked” state in which, between the first conductive element 11 and the second conductive element 12, the transmission of an RF signal is prevented .
    The “on” and “blocked” states of the switch correspond to different states of the phase change material 20. The phase change material 20 is in particular capable of passing from an amorphous state to a crystalline state and vice versa as a function of the temperature to which it is brought. Thus, this phase change material 20 inserted between the conductive elements 11, 12 is capable, when it is in amorphous form, of adopting a state of high resistivity, and when it is in crystalline form, of adopting a state of low resistivity. By "low resistivity" is meant a resistivity which may be for example between 10 4 ohm.cm and 10 2 ohm.cm. By "high resistivity" is meant a resistivity which may be for example between 10 ohm.cm to 1000 ohm.cm.
    When the phase change material 20 is in its weakly resistive state (ie crystalline), an RF signal can thus be transmitted from the first conductive element 11 to the second conductive element 12 while when the phase change material 20 is in its highly resistive state (ie amorphous), the RF signal arriving at the first conductive element 11 is reflected and is therefore not transmitted to the second conductive element 12.
    To pass the phase change material 20 from a crystalline state to an amorphous state and vice versa, the device is provided with means for controlling the state of the PCM material 20. This control is implemented here by heating, typically by Joule effect, for example by injecting an electric control current directly into the PCM material 20 of the first region 15.
    The state control means of the first region 15 of PCM material are provided with a first control electrode 13a to which the electrical signal of state control of the first region 15 of phase change material is intended to be applied. The control signal is typically a DC signal, in particular a current, delivered in the form of DC pulses.
    In this example, the control means are also provided with another control electrode 14a, the first region 15 of phase change material being disposed between the first electrode 13a and this other control electrode 14a.
    To pass from a crystalline state to an amorphous state, the phase change material 20 is heated to a temperature belonging to a first range, so as to exceed the melting temperature T F of the material 20. The temperatures of the first range are high and typically between 600 ° C and 1000 ° C. The melting temperature T F is for example of the order of 725 ° C for GeTe.
    The phase change material 20 quickly cools down for a period of between ten and one hundred nanoseconds so that recrystallization is avoided and the amorphous state is preserved.
    To pass from the amorphous state to the crystalline state the phase change material 20 is then heated more weakly, at a temperature belonging to a second range. The temperatures of the second range are lower than T F. For example, it is heated to a temperature of the order of 150 ° C. when the material 20 is GeTe. Heating is then generally provided for a longer duration than when it is desired to bring the material 20 from the crystalline state to the amorphous state. The duration of the heating allowing the reorganization of the material 20 in its crystalline structure can for example be provided between a microsecond and ten milliseconds.
    The current pulse making it possible to make amorphous can have an intensity between several hundreds of micro-amps and several tens of milliamps and depends on the quantity of PCM material. One can for example provide pulses of the order of 1 mA and a duration of the order of 10 ps to effect crystallization, while to achieve amorphization, the current pulses have a higher intensity, for example of the order of 10 mA and a shorter duration, for example of the order of 50 ns.
    To prevent inadvertent transmission of part of the RF signal to the control electrode (s) 13a and / or 14a when the phase change material 20 of the first region 15 is in its weakly resistive crystalline state, the device has the special feature to be provided with decoupling means.
    These decoupling means are in the example of FIG. 2 in the form of switches INT1, INT2 for decoupling arranged on either side of the first region 15. The switches INT1, INT2 for decoupling alternately make it possible to couple and decouple the electrodes 13a and 14a respectively of the first region 15 of PCM material. A controlled decoupling is thus implemented between a DC part and an RF part of the RF switch.
    A first decoupling switch INT1 is thus provided for, when it is set to the on state, coupling the control electrode 13a and the first region 15 of phase change material. The electrical control signal DC can then be transmitted from the electrode 13a to the first region 15 of phase change material.
    The first decoupling switch INT1 is also suitable for, when it is put in the blocked state, decoupling said control electrode 13a and the first region 15 of phase change material. The transmission of signals between electrode 13a and region 15 is then prevented, and in particular that part of the RF signal from the first region 15 of PCM material does not go to the electrode 13a.
    The first decoupling switch INT1 is itself formed by a second region 17 of phase change material disposed between the control electrode 13a of the first region 15 of phase change material of the RF switch 11-20 -12.
    In this particular configuration example, the decoupling switch INT1 is also provided with a second control electrode 13b arranged against a face of the second region 17 of PCM material opposite to another face against which the first electrode 13a is arranged. The second region 17 of PCM material of the decoupling switch is thus interposed between the first control electrode 13a and this second control electrode 13b.
    The changes of state (passing to blocked and inversely blocked to passing) of the uncoupling switch INT1 corresponding to changes of states (crystalline to amorphous state and inversely amorphous to crystalline) of the second region 17 of material of change of In this example, phase are controlled by means of electrodes 16a, 16b called "heating" arranged on either side of the second region 17 of phase change material and separate from the control electrodes 13a, 13b.
    To heat the PCM material of the second region 17 of the uncoupling switch INT1 and have it change state, direct heating can be provided in which the heating electrodes 16a, 16b are arranged in contact with the PCM material of the second region 17. Heating is typically obtained by Joule effect, by injecting an electrical activation signal, for example in the form of a current in the PCM material of the second region 17. The activation signal is typically a DC signal, in particular a current, delivered in the form of pulses with direct current.
    When an appropriate current pulse passes between the two electrodes 16a and 16b through the PCM material of the second region 17, this material passes from a crystalline state to a highly resistive amorphous state. The passage of a signal between the electrode 13b and the electrode 13a is then blocked. To pass the PCM material from its amorphous state to its crystalline state, another suitable current pulse is applied between the two electrodes 16a, 16b through the second region 17 of PCM material.
    The current pulse making it possible to make the PCM material of the second region 17 amorphous may have an intensity between several hundred microamperes and several tens of milliamps depending on the quantity of PCM material. One can for example provide pulses of the order of 1 mA and a duration of the order of 10 ps to effect crystallization, while to obtain amorphization, the current pulses have a higher intensity, for example of the order of 10 mA and a shorter duration, for example of the order of 50 ns.
    A second decoupling switch INT2 is also provided for alternately coupling and decoupling a second control electrode 14a of the control means and the first region 15 of phase change material. The second decoupling switch INT2 is also suitable for, when in the blocked state, decoupling the other control electrode 14a from the first region 15 of phase change material. This prevents part of the RF signal from being transmitted to the other control electrode 14a when the first region 15 of phase change material is in a state of low resistivity.
    The second decoupling switch INT2 is itself provided with a third region 19 of phase change material around which the other control electrode 14a, a control electrode 14b, a heating electrode 18a, and another electrode heating 18 are distributed.
    The passage alternately from the blocked state to the on state and from passing to blocked of the decoupling switch INT2 is controlled by the heating electrodes 18a, 18b arranged against opposite faces of the third region 19 of PCM material.
    In this exemplary embodiment, the control electrodes 14a, 14b situated against opposite faces of the third region 19 of PCM material different from the faces against which the heating electrodes 18a, 18b are arranged. In this configuration, the control electrodes 14a, 14b are separate from the heating electrodes 18a, 18b and are not in contact with the latter.
    Thus, in the example of the device which has just been described, the decoupling switches INT1, INT2 are equivalent to variable bistable resistors advantageously of structure similar to that of the RF switch.
    Different operating states of a device as previously described are illustrated in Figures 3A-3D.
    In a first state illustrated in FIG. 3A, the regions 15, 17, 19 of PCM material are each in a weakly resistive crystalline phase. Part of an RF signal intended to pass through the region 15 of PCM material is then liable to leak towards the electrodes 13a and 14a.
    An activation current is injected between the electrodes 16a and 16b and between the electrodes 18a and 18b to pass the second and third regions 17 and 19 of PCM material respectively into a highly resistive amorphous phase. The device is then in a second state as illustrated in FIG. 3B. The regions 17 and 19 of PCM material being in highly resistive amorphous phases, a leakage of part of the RF signal to the control electrodes 13a and 14a is avoided. This state corresponds to the desired on state of the RF switch.
    Next, it is sought to block the transmission of the RF signal between the first conductive element 11 and the second conductive element 12. For this, the state of the first region 15 of PCM material is modified by injecting a control current between the electrodes of command 13a and 14a.
    To allow this control current to flow, the second region 17 and third region 19 of PCM material are first put in a weakly resistive state. For this, an activation current is injected between the heating electrodes 16a and 16b and between the heating electrodes 18a and 18b so as to pass the second region 17 and third region 19 of PCM material respectively into a crystalline phase. We thus find ourselves again in a state as described above and illustrated in FIG. 3A.
    From this first state, another control current is injected between the control electrodes 13a and 14a, so as to pass the first region 15 of PCM material into a highly resistive amorphous phase without modifying the state of regions 17 and 19 of PCM material. The RF signal transmission is then blocked between the first conductive element 11 and the second conductive element 12. This blocked state of the RF switch is illustrated in FIG. 3C.
    From this state, another activation current can be injected between the electrodes 16a and 16b and between the electrodes 18a and 18b to pass the regions 17 and 19 of PCM material respectively into a highly resistive amorphous phase. We then find ourselves in a state as illustrated in FIG. 3D, in which each of the regions 15, 17, 19 is in a highly resistive amorphous phase.
    Then, an activation current can then be injected between the electrodes 16a and 16b and between the electrodes 18a and 18b to pass the regions 17 and 19 of PCM material respectively into a weakly resistive crystalline phase and to return to a state such that 'illustrated in Figure 3C before injecting an electrical activation signal between the electrodes 13a and 14a, without dissipation in the regions of PCM material 17 and 19, to pass the first region 15 of PCM material in a weakly crystalline phase resistive and thus end up again in a state as illustrated in FIG. 3A.
    To make it possible to modify the state of the central region 15 and in particular to bring to the amorphous state without modifying the crystalline state of one of the regions 17 or 19 or even of none of the regions 17,19, provision may be made these regions 17, 19 based on a PCM material different from that of the central region 15. It is also possible to provide for control of the regions 17, 19 by indirect heating, in other words without direct contact of the electrodes 16a, 16b, 18a, 18b with the PCM material of regions 17, 19, the electrodes possibly being in contact with an intermediate resistive material. Thus, the central region 15 can be based on a first PCM material such as GeTe capable of being controlled by direct heating, that is to say with direct contact of the electrodes on the PCM material and the regions 17 and 19 based on a second PCM material different from the first material, such as VO 2 , the amorphous or crystalline state of which is capable of being controlled by indirect heating. These two materials also have different transition temperatures.
    A current which circulates between the electrode 16a and the electrode 16b through an intermediate resistive material placed above a region 17 in VO 2 is capable of producing a release of heat which, by Joule effect, makes it possible to heating the material of this region 17 in VO 2 above its transition temperature to make it conductive.
    The current is maintained between the electrodes 16a and 16b to maintain the conductive state of the material of region 17.
    A cut in the current between the electrodes 16a and 16b is likely to make the material of the region 17 insulating. The passage of the control current from the central region 15 through the material of the region 17 when it is conductive does not modify its state.
    An example of the operation of such a configuration will now be described.
    We start, for example, from an initial state as illustrated 3B.
    A current is then applied between the electrodes 16a, 16b and between the electrodes 18a, 18b such that the VO 2 heats up and becomes conductive. We then go into a state as illustrated in FIG. 3A.
    The current is maintained between electrodes 16a, 16b and between the electrodes 18a, 18b and a current is applied between the electrodes 13a and 14a so as to keep the material VO 2 of regions 17, 19 conductive and make the GeTe material amorphous. the central region 15. We then pass into a state as illustrated in FIG. 3C.
    The current is then cut between the electrodes 16a, 16b and between the electrodes 18a, 18b so as to make the material VO 2 of the regions 17, 19 insulating and to pass into a state such as in FIG. 3D. Then, a current is again applied between the electrodes 16a, 16b and 18a, 18b which makes the material VO 2 of the regions 17,19 heat and makes them conductive. We then pass into a state as illustrated in FIG. 3C.
    If a current is maintained between the electrodes 16a, 16b and between the electrodes 18a, 18b and a current called "crystallization" is applied between the electrodes 13a and 14a, the material VO 2 of the regions 17, 19 remains conductive while the GeTe material of regions 15 becomes crystalline. We then return to a state as illustrated in FIG. 3A.
    If the current between the electrodes 16a, 16b and between the electrodes 18a, 18b is cut off, the material VO 2 of the regions 17, 19 then becomes insulating again and one returns to a state as illustrated in FIG. 3B.
    As a variant, another configuration can be provided with regions 15, 17 and 19 based on the same PCM material, for example GeTe. In this case, provision is then made for respective geometries and / or dimensions adapted to regions 15, 17 and / or 19 in order to be able to carry out independent switching of the RF switch and of the decoupling switch (s).
    An example of operation of this other configuration is as follows: From a first state as illustrated in FIG. 3A, an amorphization current is applied between the heating electrodes 16a and 16b and between the heating electrodes 18a , 18b. For example, the amorphization current applied is of the order of 10mA for a duration of 50 ns. Regions 17 and 19 then become amorphous. If regions 17 and 19 are controlled by indirect heating, no current then flows through region 15 and the PCM material of this region 15 remains crystalline. In the case of direct heating of regions 17 and 19, the configuration of the circuit can be provided such that this current will be sufficiently low, in particular much less than 10 mA, so as not to modify the state of region 15 and that the PCM material thereof remains crystalline. The state of the PCM material of regions 17, 19 which has become amorphous is illustrated in FIG. 3B. When a crystallization current between the heating electrodes 16a, 16b and a crystallization current between the heating electrodes 18a, 18b is now applied, the regions 17 and 19 return to a crystalline state. Region 15 then remains in its crystalline form. We thus return to the state illustrated in FIG. 3A.
    If an amorphization current is now applied between the control electrodes 13a and 14a for example of the order of 10 mA according to a duration of the order of 50 ns, the current passes through regions 17, 15 and 19 and region 15 is made amorphous. The intensity of the amorphization current is typically proportional to the width of PCM material crossed. If regions 17 and 19 are provided with a dimension measured between the electrodes 13a, 13b and between the electrodes 14a, 14b larger than a dimension of the region 15 measured between the electrodes 13b, 14b then the current to make amorphous region 15 is more important than making regions 17 and 19 amorphous. It is therefore possible to have a passage from region 15 in the amorphous state while regions 17, 19 are maintained in a crystalline state. We are then in a state as illustrated in FIG. 3C.
    From this state, an amorphization current can be applied between the heating electrodes 16a, 16b and between the heating electrodes 18a, 18b so that the regions 17 and 19 become amorphous. We then pass into the state illustrated in FIG. 3D. From this state, if a crystallization current is applied between the heating electrodes 16a and 16b and between the heating electrodes 18a, 18b, the regions 17 and 19 become again in a crystalline state and we go back into the state illustrated in Figure 3C.
    From this state, if a crystallization current is applied between the control electrodes 13a and 14a of 1mA according to a duration of 10 ps, then this current crosses regions 17,15 and 19 and region 15 becomes again in a crystalline state , while regions 17 and 19 remain in a crystalline state. We then return to the state illustrated in FIG. 3A.
    Another mode of implementation provides for being able to pass directly from a state as illustrated in FIG. 3A to a state as illustrated in FIG. 3D (passage symbolized by a double arrow in broken line). This is the case if the dimensions of the regions 17, 19 measured respectively between the electrodes 13a, 13b and 14a, 14b are provided, this time less wide than a dimension of the region 15 measured between the electrodes 13b, 14b. This is also the case if a sufficiently large amorphization current is provided in terms of intensity and duration to make regions 17, 15, 19 amorphous. For example, if regions 17 and 19 have a width of 1 pm and a current of the order of 10 mA is necessary to make them amorphous and if the region 15 has a width of 2 pm, one can provide a current of 20 mA to pass directly from the state of the figure 3A to that of FIG. 3D.
    Likewise, it is also possible to go directly from a state as illustrated in FIG. 3D to a state as illustrated in FIG. 3A.
    A switch as described above can be produced in thin layers on a substrate.
    Figures 4A-4C illustrate (respectively through a perspective view, a top view, and a cross-sectional view) an example of integration of an RF switch with PCM material and system RF / DC decoupling on a substrate 6 which can be semiconductor and for example made of silicon.
    The switch can be placed on an insulating layer 8 for passivation of the substrate 6 or an insulating layer 8 for example of the IMD type (“Intermetal Dielectric Layer”) and which is located between two interconnection levels of electronic components or else a layer insulator belonging to one of the final levels commonly called "back-end" of an integrated circuit.
    The conductive elements 11, 12, and electrodes 13a, 13b, 14a, 14b, 16a, 16b and 18a, 18b are formed for example from a conductive layer 10 which can be, for example, based on a pure metal such as Aluminum (Al), copper (Cu), gold (Au), titanium (Ti), silver (Ag) or Tungsten (W) or a metal alloy such as l 'AICu, or AISi. Other conductive materials such as for example doped semiconductors, in particular doped silicon, metal oxides such as for example ruthenium oxide (RuO 2 ), iridium oxide (lrO 2 ) can also be used. Advantageously, the conductive elements 11, 12, and control electrodes 13a, 13b, 14a, 14b are based on transparent conductive material such as for example ITO conductive oxide (for “Indium tin oxide”) or conductive polymer such as PEDOT (3,4-ethylenedioxythiophene). The deposition of the conductive layer is carried out for example by a PVD method (for “Physical Vapor Deposition”). Several stacked conductive materials can be used to form the conductive elements and electrodes.
    In the example of FIGS. 4A-4C, the conductive elements and electrodes are based on the same conductive material. As a variant, the conductive elements can be produced using conductive material different from that or those used for producing the heating and control electrodes.
    The insulating layer 8 on which the elements 11, 12 and electrodes are arranged can, for its part, be for example based on silicon dioxide SiO 2 , or SiN, or AIN, or AI 2 O 3 .
    The phase change material (s) of regions 15, 17 and 19 may (or may) be based on chalcogenide or on an alloy of chalchogenides such as Ge 2 Sb 2 Te 5 or GeTe. The GeTe allows for example to obtain a resistance modulation from 10 4 to 10 6 following a rapid and controlled heating of the material. This modification is due to the rapid and reversible change between a highly resistive phase (for which the conductivity typically of the order of lOS / m to 1 S / m for the amorphous phase of GeTe) and a weakly resistive phase (where the conductivity is typically of the order of 100 kS / m to 1 MS / m for the crystalline phase of GeTe). As in the embodiments described above, the regions 15, 17, 19 can be based on the same PCM material or else formed from different PCM materials.
    The dimensions of the first region 15 of PCM material are typically provided so as to have a resistance in the on state of the order of 1 Ohm in order to allow good transmission of the RF signal. It is possible, for example, to provide for this a region 15 of GeTe of parallelepiped shape of length XI for example of the order of 1 μm between the conducting elements 11 and 12, a width Y1 for example of the order of 30 μm between the electrodes 13b, 14b and a thickness for example of the order of 100 nm for a conductivity material of 300 kS / m.
    The dimensions of regions 17 and 19 are defined according to the desired resistance values. When these regions 17, 19 are made of GeTe, a resistance varying from 30 ohms to 1 Mega-ohms for example can be obtained by providing these regions in the form of parallelepipedic strips of length 1 μm, width of 1 μm and thickness 100 nm. Thus, it is advantageous to produce decoupling switches of small dimensions.
    The regions 15, 17 and 19 of PCM material can be provided with dimensions such as a cross section of a volume of PCM material of the second region 17 separating the heating electrodes 16a, 16b (or of the third region 19 separating the heating electrodes 18a, 18b) is smaller than a cross section of a volume of the first region 15 of PCM material separating the control electrodes 13b, 14b. The cross section is measured parallel to the z axis of an orthogonal coordinate system [0; x; y; z] defined in FIGS. 4A-4C.
    In the example illustrated in FIG. 4B, regions 17, 19 of dimension X2 are provided between the heating electrode elements 16a, 16b (resp. 18a, 18b) greater than another dimension Y3 corresponding to the width of the heating electrodes 16a, 16b (resp. 18a, 18b) in contact with region 17 (resp. 19). With such a geometry, it is possible to obtain a phase change in a region 17 when a first current between the heating electrodes 16a, 16b passes through this region 17 without, however, that a current of the same intensity between the control electrodes 13a , 13b does not necessarily generate a corresponding phase change in the region 17. In this example, the dimension X2 of the region 17 measured between the control electrodes 13a, 13b is also expected to be greater than that X3 corresponding to the width of the electrodes of the electrodes 13b, 14b in contact with the region 15. This participates in the establishment of an independent control between decoupling switches and RF switch.
    Thus, the energy required to change the phase of the regions 17,19 will be lower than to change the phase of the first region 15. The regions 17,19 are provided in terms of composition and dimensions so as to have resistance provided low enough not to oppose the flow of current when changing the phase of the first region of PCM 15 material and a sufficiently high resistance in the blocked state for example of the order of 1 Ω to allow a effective LF / RF decoupling.
    An example of a method of manufacturing an RF switch with a DC / RF decoupling system will now be given in connection with FIGS. 5A-5H.
    The starting support for this process is a substrate 6, for example made of silicon covered by an insulating layer 8 for example made of SiO 2 (silicon dioxide) and of thickness which can be for example of the order of 500 nm.
    On this insulating layer 8, a conductive layer 10 is first deposited in which patterns are produced, for example by photolithography and etching. This conductive layer 10 is typically formed by a stack of several conductive materials, for example a Ti-based layer with a thickness of around 10 nm, a TiN-based layer with a thickness of 1 order of 40 nm, a layer of AICu with a thickness of the order of 440 nm, a layer of Ti with a thickness of the order of 10 nm and a layer based on TiN d thickness of the order of 100 nm. The deposit can be made by a PVD technique. The structuring of the conductive layer 10 is carried out so as to partially define the patterns of the conductive elements 11, 12, of the control electrodes 13a, 13b, 14a, 14b, of the heating electrodes 16a, 16b, 18a, 18b.
    In the particular example illustrated in FIGS. 5A-5B (respectively giving a top view and a cross-sectional view along an axis AA ′), the conductive elements 11, 12 between which the RF signal is intended to pass through are formed of several conductive portions 11a, 11b, 11c, lld, 12a, 12b, 12c, 12d, disjoint. The conducting elements 11, 12 can be formed in particular of main portions 11a, 12a in the form of studs occupying a given surface (measured parallel to the main plane of the substrate) and of several portions 11b, 11c, lld, 12b, 12c, 12d, secondary in the form of parallel conductive strips arranged between the pads 11a, 12a and of size in terms of surface area occupied on the substrate smaller than that of the pads.
    The control electrodes 13b, 14b extend in this example between the conductive elements 11,12.
    A deposition of insulating material, for example SiO 2 with a thickness, for example of the order of 700 nm, is then carried out using, for example, a plasma of HDPCVD type for ("High Density Plasma Chemical Vapor Deposition"). Then, for example by CMP (“Chemical mechanical polishing”), a planarization is carried out so as to reach and reveal the upper face of the conductive portions.
    Then, a phase change material 20, such as GeTe for example of thickness of the order of 100 nm, is deposited for example by PVD. Patterns are then produced in this material 20 so as to form the first region 15 of PCM material for the RF switch and the second and third regions 17, 19 of PCM material for the decoupling switches. The patterns of PCM 20 material are typically structured by photolithography and etching, for example of the IBE type (for “Ion Beam Etching”).
    In the embodiment illustrated in FIGS. 5C-5D, the first region 15 of PCM material is structured in the form of plots 15a, 15b, 15c each aligned in the shape of a cross, the ends of the branches of which rest on the conductive portions of the elements. conductors 11, 12 and control electrodes 13b, 14b.
    The regions 17, 19 of PCM material produce cross-shaped patterns, the ends of the branches of which rest on conductive portions of heating electrodes and control electrodes.
    The phase change material 20 is then passivated by deposition of a dielectric material 28 such as SiN with a thickness for example of the order of 100 nm and which can be formed using a PECVD technique ( for "Plasma Enhanced Chemical Vapor deposition").
    Vertical connection elements also called “vias” 41 are then formed in this dielectric material 28. For this, first of all, and as illustrated for example in FIGS. 5E-5F, openings 29 for example by photolithography and engraving. Reactive ion etching (RIE) can be used in particular. The openings 29 reveal contact zones of portions of the conductive layer 10 in which conductive elements and electrodes are formed.
    A second conductive level 60 is then deposited, for example by PVD, in order to complete the formation of the conductive elements 11 and 12. The second conductive level 60 can be formed of a stack comprising for example a layer of Ti of the order of 10 nm, a layer of TiN which may be of the order of 40 nm, a layer of AICu for example of the order of 900 nm, a layer of Ti for example of the order of 10 nm and a layer of TiN for example of the order of 40 nm.
    Conductive portions 61, 62 are then produced in this second conductive level which is then structured by photolithography and etching. These conductive portions 61, 62 are respectively connected to the conductive portions 11a, 11b, 11c, lld, and to the conductive portions 12a, 12b, 12c, 12d of the first conductive level via vias 41.
    A distribution of the conductive elements 11, 12 into conductive portions arranged on several conductive levels makes it possible to produce an arrangement as illustrated in FIGS. 5G-5H in which portions of a control electrode 13b pass opposite zones of a conductive element 11 of the second conductive level.
    Such an arrangement makes it possible to connect a control electrode 13b at several points of the first region of material 15 PCM. The control electrodes 13b, 14b can in particular be connected to the first region 15 of PCM material at several distinct points in a zone which is located between the conductive elements 11, 12, and this without coming into contact with these conductive elements 11, 12.
    In this zone, the first region 15 of PCM material is alternately connected to a conductive portion of conductive element 11 or 12 and to a conductive portion of control electrode 13b or 14b.
    A connection of the control electrodes 13b, 14b at several distinct points 15a, 15b of the first region 15 of PCM material distributed along the latter can allow better control of the amorphous and crystalline states of this first region 15.
    As a variant of the arrangement which has just been described, provision may be made to produce the control electrodes on several levels with at least one conductive portion arranged in a first plane parallel to a main plane of the substrate, a second conductive portion disposed in a second plane parallel to the main plane of the substrate and distinct from the first plane, and a conductive via connecting the first conductive portion of the second conductive portion, in order to be able to pass the control electrode between the RF conductive elements 11, 12 and make a connection at several points of the first region 15 of PCM material.
    In the example of the process which has just been described, the PCM material of the regions 15, 17, 19 is located between two conductive levels 10, 60 in which the conductive elements 11, 12 are formed.
    Another distribution of the PCM material and of the conductive levels is possible. Thus, according to another example of configuration illustrated in FIG. 6, the regions 15, 17, 19 of PCM material are arranged under the conductive levels 10, 62 in which the conductive elements 11, 12, the control electrodes 13a, 14a, 13b , 14b, and heating electrodes are formed. To form such a device, the PCM material is typically deposited before making the metal level (s) of the electrodes. A first advantage is that the PCM material can be deposited in a first clean room type environment respecting certain contamination rules specific to BEOL (“Back-end of line”) processes in microelectronics and that can then perform the metal levels in another environment, for example conducive to the deposition of noble metal. Another advantage of such a configuration is that certain PCM materials may require annealing at high temperatures typically above 600 ° C. after the deposition step, while such temperatures may prove to be too high for certain metals.
    As has been seen previously, the state of the first region 15 of PCM material can be modulated by direct heating, that is to say with a heating obtained by passing an applied current through electrodes 13b, 14b arranged directly in contact with the PCM material.
    It is also possible to implement a change of phase or state of the regions 15, 17, 19 by indirect heating by means of thermal radiation / conduction produced by a remote heat source which is not in contact with the phase change material.
    Such a type of indirect heating is illustrated for example in FIG. 7A. In this example, the RF switch is provided with control electrodes 13b, 14b located on either side of the first region 15 of PCM material but this time at a distance from the latter, without being in contact with this first region 15. A separation space between region 15 and electrodes 13a, 13b can be provided on the order of several tens of nm, for example 100 nm. This space can be occupied by an electrically insulating and preferably thermal conductive material such as for example SiN or ΙΆΙΝ.
    A variant illustrated in FIG. 7B, this time provides for controlling the change of state of the decoupling switches INT1, INT2 by indirect heating. The heating electrodes 16a, 16b, 18a, 18b making it possible to modulate the resistivity of the regions 17, 19 of PCM material of the decoupling switches are thus located at a distance from these regions 17,19.
    In the RF switch illustrated in FIG. 7C, these are both the regions 17, 19 of the decoupling switches and the central region 15 of PCM material, the state of which is controlled by indirect heating. The heating electrodes 16a, 16b, 18a, 18b and the control electrodes 13b, 14b are not placed in contact with the PCM material, the state of which they make it possible to control.
    In one or other of the examples of RF switch which have just been described, the control electrodes 13a, 13b, 14a, 14b making it possible to modulate the resistivity of the first region 15 of PCM material and the heating electrodes 16a ,
    16b, 18a, 18b for modulating the resistivity of the regions 17, 19 of PCM material are distinct. According to another possibility of implementing the switch, provision is made for modulating the state of the region of the RF switch and of an associated DC / RF decoupling switch by means of the same pair d electrodes.
    In FIG. 8, a variant with a single decoupling switch INT1 connected to the region 15 of PCM material is provided. In order to further reduce the size of the RF switch, it is also possible to reduce the number of electrodes associated with the decoupling switch INT1. Instead of providing for the use of specific heating electrodes, provision is made in this example to apply electrical activation signals making it possible to modulate the state of the region 17 of PCM material of the decoupling switch, respectively at a control electrode 13a and a control electrode 13b
    To modify the resistivity state of the second region 17 of PCM material, an electrical control signal is applied between the control electrodes 13a, 13b.
    To modify the resistivity state of the first region 15 of PCM material, an electrical activation signal is applied between a control electrode 13a and a conductive element 11 or 12.
    Such a configuration can be used to form a controllable bypass also called a controllable “shunt” as illustrated in FIG. 9.
    An RF signal Si is conveyed by a first conductive element in the form of a conductive line 110 to which is connected a region 15 of PCM material, itself connected to a decoupling switch INT1.
    A signal Si circulating in the conductive line 110 when the first region 15 of PCM material is in its highly resistive state. When the first region 15 is in its weakly resistive state, a short circuit is created so that the signal Si is then transmitted to a second conductive element serving as ground 120 both for the RF part and for the DC part of the device. and in particular for the state control means of the first PCM region 15.
    As a variant of the examples illustrated above, it is possible to provide at least one decoupling switch having an electrode fulfilling both the function of control electrode and of heating electrode. The electrode is thus able to convey a state control signal of the first region of PCM material and an activation signal making it possible to modify the state of the PCM material of this decoupling switch.
    In the embodiment illustrated in FIG. 10, to modify the state of a region 17 of PCM material of a first decoupling switch INT1, an activation signal is applied between an electrode 13a serving both to control and heating electrode, and an electrode 16a serving as a heating electrode. When a phase change of a region 19 of PCM material of a second decoupling switch INT2 is desired, an activation signal is applied between a control electrode 14a also functioning as a heating electrode, and another electrode 18a of heating. The electrodes 13a, 13b, 14a, 14b, are provided to convey a control signal making it possible to modify the state of the region 15 of PCM material of the RF switch.
    Provision may be made to associate the RF switch with one or more decoupling switches based on PCM 200 material different from the PCM 20 material disposed between the conductive elements 11, 12 of the RF switch. In particular, when the PCM 200 material has a transition temperature different from that of the PCM 20 material, this promotes independent control of the RF switch and the decoupling switches.
    In an exemplary embodiment illustrated in FIG. 11, the RF switch is provided with a region 15 based on a first PCM material 20 such as for example GeTe or Ge 2 Sb 2 Te 5 . The switched resistors or decoupling switches INT1, INT2 are this time produced using another phase change material 200, for example VO 2 . At ambient temperature, such a material is in the insulating state, while at a temperature of the order of 68 ° C., the VO 2 undergoes an abrupt and reversible transformation of its electrical properties and becomes conductive. When it is desired to switch the first region 15 of PCM material, a current can be made to flow between the heating electrodes 16a and 16b and between the heating electrodes 18a and 18b. By Joule effect, the resistors between the heating electrodes 16a, 16b and 18a, 18b will heat up. The thermal radiation produced then makes it possible to raise the temperature of their PCM 200 material, here based on VO 2 , above its transition temperature.
    A control current can then be passed through the electrodes 13a, 14a to modify the state, in other words the phase in which the first PCM material is found.
    We can then cut the activation current in the resistors between heating electrodes 16a and 16b and between 18a and 18b, in order to cause a change of state or phase of the second PCM 200 material. The second material 200, here of the VO 2 then goes back below its transition temperature and will insulate between the RF switch part and the DC control.
    The decoupling level between the RF switch part and the DC control part of the PCM material RF switch can be increased by increasing the number of decoupling switches and placing one or more additional decoupling switches in series with the or decoupling switches based on PCM material.
    In the embodiment of FIG. 12, additional switches INT3 and INT4 are arranged in series respectively with the first decoupling switch INT1 and the second decoupling switch INT2.
    The additional switches INT3 and INT4 are respectively provided with regions 27, 29 of phase change material, the state of which is controlled by means of heating electrodes 26a, 26b, 28a, 28b.
    According to an alternative embodiment of the RF switch with PCM material, provision may be made to apply the DC control signals of the state of the first region 15 of PCM material by means of the conductive elements 11, 12 by which the RF signal is intended. to transit.
    FIG. 13 illustrates an exemplary embodiment of such a variant with switches INT11 and INT12 each formed from a pair of control electrodes 33a, 33b (respectively 34a, 34b) arranged on either side of a region 27 (resp.
    29) of PCM material, the crystalline / amorphous state of which is controlled by means of heating electrodes 36a, 36b (resp. 38a, 38b).
    The DC signals for controlling the state of the first region 15 of PCM material are conveyed by means of electrodes 33b, 34b of the switches INT11 and 5 INT12 in contact respectively with the first conductive element 11 and the second conductive element 12.
    FIG. 14 illustrates another exemplary embodiment, without heating electrodes on either side of the regions 17, 19 of phase change material of the decoupling switches. The control electrodes 13a, 13b, 14a, 14b in this case play both the role of controlling the state, amorphous or crystalline, of the PCM material of the region 15 forming the RF switch and also of the electrodes of control of the state, amorphous or crystalline of the regions 17, 19 of the decoupling switches. Such a device can thus pass directly from a state as illustrated in FIG. 3A, in which the RF switch and the decoupling switches are closed (ON) to a state as illustrated in FIG. 3D where the 'RF switch and decoupling switches are open (OFF), and vice versa from the state illustrated in Figure 3D to the state illustrated in Figure 3A.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. RF switch able to modify a connection between at least a first conductive element (11, 110) and at least a second conductive element (12, 120), said switch being adapted for alternately routing an RF signal and for interrupting the routing of an RF signal between the first conductive element and the second conductive element, the RF switch being provided with:
    - a first region (15) based on phase change material (20) disposed between the first conductive element (11) and the second conductive element (12),
    - state control means of said first region (15) of phase change material configured to modify by heating the crystalline or amorphous state of said phase change material of said first region, the control means being provided with '' control electrodes (13a, 13b, 14a, 14b, 12, 120) arranged on either side of the first region (15) and designed to apply an electrical signal for controlling the state of the first region (15) of phase change material, the switch being further provided with at least a first decoupling switch (INT1) configured to alternately connect a first control electrode (13a) and said first region (15) of phase change material when said first decoupling switch is on and for disconnecting the first control electrode (13a) and the first region (15) of phase change material when the decoupling switch is blocked, the first decoupling switch (INT1) comprising a second region (17) of phase change material disposed between the first control electrode (13a) and a second control electrode (13b) disposed against the first region (15 ) of phase change material.
    [2" id="c-fr-0002]
    2. RF switch according to claim 1, wherein the RF switch is provided with heating means configured to place the first decoupling switch (INT1) alternately in a on state and in a blocked state, the heating means being provided with electrodes (13a, 13b 16a, 16b, 18a, 18b) arranged on either side of said second region (17) of phase change material and provided for applying an electrical activation signal capable of modifying the crystalline state or amorphous of said phase change material of said second region (17) of phase change material.
    [3" id="c-fr-0003]
    3. RF switch according to claim 2, wherein said electrodes (16a, 16b, 18a, 18b) capable of applying the electrical activation signal to the first decoupling switch (INT1) are heating electrodes separate from the first electrode. control (13a) and said second control electrode (13b).
    [4" id="c-fr-0004]
    4. RF switch according to claim 2, wherein the electrical activation signal is applied through the first control electrode (13a).
    [5" id="c-fr-0005]
    5. RF switch according to claim 4, wherein the first conductive element is a conductive line (110) capable of conveying the RF signal from a first point to a second point of an RF circuit, the first region of change material phase (15) forming a bypass and the second conductive element (120) forming a mass to which the RF signal is transmitted when the phase change material of said first region (15) is brought into a crystalline state.
    [6" id="c-fr-0006]
    6. RF switch according to claim 2, wherein the electrical activation signal is conveyed by the first control electrode (13a) and a heating electrode (16a) separate from said control electrodes.
    [7" id="c-fr-0007]
    7. RF switch according to one of the preceding claims, further comprising a second decoupling switch (INT2) capable of alternately connecting and disconnecting another control electrode (14a) and the first region (15) of phase change material , said second decoupling switch (INT2) comprising a further region (19) of phase change material disposed between said other control electrode (14a) and said first region (15) of phase change material.
    [8" id="c-fr-0008]
    8. RF switch according to claim 7, configured to alternately pass from a first state to a second state and vice versa and to pass from the first state of the switch to a third state and vice versa, and to pass from the third state to a fourth state and Conversely,
    - the first state of the switch being such that the first decoupling switch (INT1), the second decoupling switch (INT2) are conducting while the first conducting element (11) and the second conducting element (12) are connected one to the other,
    - the second state of the switch being such that the first decoupling switch (INT1), the second decoupling switch (INT2) are blocked while the first conducting element (11) and the second conducting element (12) are connected one to the other,
    - the third state of the switch being such that the first decoupling switch (INT1), the second decoupling switch (INT2) are conducting while the first conducting element (11) and the second conducting element (12) are disconnected one the other,
    - the fourth state of the switch being such as the first decoupling switch (INT1), the second decoupling switch (INT2) are blocked while the first conductive element and the second conductive element are disconnected from each other.
    [9" id="c-fr-0009]
    9. RF switch according to claim 8, configured to alternately pass from a first state to a second state and vice versa and to pass from the first state of the switch to a third state and vice versa,
    - the first state of the switch being such that the first decoupling switch (INT1), the second decoupling switch (INT2) are conducting while the first conducting element (11) and the second conducting element (12) are connected one to the other,
    - the second state of the switch being such that the first decoupling switch (INT1), the second decoupling switch (INT2) are blocked while the first conducting element (11) and the second conducting element (12) are connected one to the other,
    - the third state of the switch being such as the first decoupling switch (INT1), the second decoupling switch (INT2) are blocked while the first conductive element and the second conductive element are disconnected from each other.
    [10" id="c-fr-0010]
    10. RF switch according to one of claims 1 to 9, wherein the first region (15) of phase change material is based on a first phase change material, the second region (17) of material to phase change being based on a second phase change material different from the first phase change material.
    [11" id="c-fr-0011]
    11. Switch according to one of the preceding claims, further comprising at least a third decoupling switch (INT3) in series with the first decoupling switch (INT1), the third decoupling switch comprising a region (27,29) of phase change material.
    [12" id="c-fr-0012]
    12. RF switch according to one of claims 1 to 11, the switch resting on a substrate, the first control electrode (13a) having separate connections at several points of the first region (15) of PCM material, the first element conductor (11) or the first electrode (13a) being provided with a first conductive portion arranged in a first plane, a second conductive portion disposed in a second plane parallel and distinct from the first plane, and a via conductor connecting the first conductive portion of the second conductive portion, the first control electrode (13a) extending between the first conductive element (11) and the second conductive element (12) without being in contact with the first conductive element ( 11) or the second conductive element (12).
    [13" id="c-fr-0013]
    13. RF switch according to one of claims 1 to 12, wherein the RF switch is provided with heating means configured to place the first decoupling switch (INT1) alternately in a conducting state and in a blocked state, the means of heating being indirect heating means provided with heating electrodes arranged on either side of said second region of phase change material and at a distance from said second region of phase change material.
    [14" id="c-fr-0014]
    14. RF switch according to one of claims 1 to 13, wherein the heating means are provided with heating electrodes (16a, 16b) arranged on either side of said second region (17) of change material phase, the second region of phase change material having between its heating electrodes a dimension X2 different from another dimension Y3 corresponding to the width of the heating electrodes (16a, 16b) in contact with the second region (17) phase change material
    [15" id="c-fr-0015]
    15. RF switch according to one of claims 1 to 14, and wherein the second region of phase change material has between its heating electrodes a dimension X2 different from a dimension X3 corresponding to the width of the first electrode ( 13a) control and another control electrode (14b) in contact with the first region of phase change material.
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    同族专利:
    公开号 | 公开日
    CN109599487A|2019-04-09|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
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    法律状态:
    2018-09-28| PLFP| Fee payment|Year of fee payment: 2 |
    2019-03-22| PLSC| Search report ready|Effective date: 20190322 |
    2019-09-30| PLFP| Fee payment|Year of fee payment: 3 |
    2020-09-30| PLFP| Fee payment|Year of fee payment: 4 |
    2021-09-30| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1758680|2017-09-19|
    FR1758680A|FR3071364B1|2017-09-19|2017-09-19|RF / DC DECOUPLING SYSTEM FOR RF SWITCHES BASED ON PHASE CHANGE MATERIAL|FR1758680A| FR3071364B1|2017-09-19|2017-09-19|RF / DC DECOUPLING SYSTEM FOR RF SWITCHES BASED ON PHASE CHANGE MATERIAL|
    EP18193593.3A| EP3457491B1|2017-09-19|2018-09-11|System for rf/dc decoupling for rf switches made from phase change material|
    US16/131,220| US10644067B2|2017-09-19|2018-09-14|RF/DC decoupling system for RF switches based on phase change material|
    CN201811089327.5A| CN109599487A|2017-09-19|2018-09-18|RF/DC for the RF switch based on phase-change material decouples system|
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